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Wiley, Advanced Materials, 20(20), p. 3839-3843, 2008

DOI: 10.1002/adma.200800949

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Transparent Inverted Organic Light-Emitting Diodes with a Tungsten Oxide Buffer Layer

This paper is available in a repository.
This paper is available in a repository.

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Abstract

A study was conducted to demonstrate the formation of a transparent organic light-emitting diodes (OLEDs) by using transition metal oxides (TMOs) of WO3. OLEDs were used for various commercial application due to their high efficiency and longer lifetime. It was observed that the use WO3 can provide a protective layer on the organic layers, OLEDs with such layers can achieve high efficiency at an average transmittance, and OLEDs with these layers showed a sputtering damage. Secondary ion mass spectroscopy (SIMS) was used to investigate the penetration depth of ITO into the buffer layer and transmission electron microscopy (TEM) was used to understand the nanostructure formation of WO3/ITO interface. The formation of WO3 nanocrystalline films played a significant role in blocking high energetic particles.