V-shaped pits( V-defects) were observed in semipolar (11-22)-oriented InGaN/GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE). The pit morphology was that of inverted rhombic or trigonal pyramids aligned along the in-plane [1-100] direction. Pit facet orientations were identified. The surface pits were found to be connected at their apex to mixed type a+c threading dislocations with large screw components. Such dislocations exhibited [11-20] average line directions with zig-zag <10-10> local lines, and they also induced V-defects at the InGaN/GaN interface.