Luminescent, cerium doped Lu2SiO5 thin films with C2/c symmetry have been prepared by pulsed laser deposition (PLD) at temperatures much lower than the crystallization temperature (2150 °C) of the corresponding bulk crystals. The PLD grown films show the typical luminescence resulting from the Ce3+ 5d-4f transition. Maximum luminescence efficiency was observed for films prepared at an oxygen partial pressure of 200 mTorr at 600 °C. These conditions reflect a balance between Ce4+/Ce3+ interconversion and the crystalline quality of the films. The results indicate that PLD offers a low temperature deposition technique for complex oxide phosphor materials.