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Published in

American Institute of Physics, Applied Physics Letters, 8(104), p. 081612

DOI: 10.1063/1.4867020

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Heavily strained BaZr0.8Y0.2O3−x interfaces with enhanced transport properties

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This paper is available in a repository.

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Abstract

A study of the structure and transport properties of highly textured, epitaxial oriented BaZr0.8Y0.2O3−x thin films grown on NdGaO3(110) is reported. Films have been grown by pulsed laser deposition and their conductivity studied as a function of temperature and thickness. The results show an increased conductance as the sample thickness decreases. The measured conductivity corresponding to an in-plane conductivity of 20 S cm−1 has been systematically observed in the range of 550–600 °C for several 10 nm-thick films. The high values of conductivity are possibly related to the high densities of defects, mostly dislocations at the interface of the film with the substrate.