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American Institute of Physics, Applied Physics Letters, 23(55), p. 2402

DOI: 10.1063/1.102292

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Reduction of interface‐state density by F2treatment in a metal‐oxide‐semiconductor diode prepared from a photochemical vapor deposited SiO2film

Journal article published in 1989 by Kohji Inoue, Masakazu Nakamura ORCID, Masanori Okuyama, Yoshihiro Hamakawa
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A new technique for the reduction of the interface‐state density N ss of a metal‐oxide‐semiconductor (MOS) diode has been developed. The SiO 2 film was deposited on Si from Si 2 H 6 and O 2 by direct photochemical vapor deposition (CVD) using vacuum ultraviolet (VUV) light of a D 2 lamp. The new technique is a F 2 treatment of the Si surface prior to the deposition of SiO 2 film. Typically, 5% F 2 gas diluted in He was introduced into the CVD chamber at 20 Pa for 5 min under UV light irradiation. The minimum value of the N ss was ∼5×109 cm-2 eV-1 at the Si midgap for the film deposited at 180 °C.