American Institute of Physics, Applied Physics Letters, 6(90), p. 061902
DOI: 10.1063/1.2437729
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Contactless electroreflectance (CER) spectroscopy has been applied to study band bending in Ga In N As Sb / Ga As quantum well (QW) structures. It has been observed that CER features significantly changes upon annealing: the period of GaAs-related Franz-Keldysh oscillations increases; intensities of excited QW transitions rose compared to the intensity of the fundamental QW transition. The observed changes in CER spectra have been explained by a shift of the Fermi level in the GaInNAsSb layer: the defect states in as-grown GaInNAsSb tend to pin the Fermi level at an energy characteristic for these defects; annealing removes defects from this material and effectively shifts the Fermi level to the conduction band.