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American Institute of Physics, Applied Physics Letters, 25(107), p. 252104, 2015

DOI: 10.1063/1.4938397

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Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack

Journal article published in 2015 by Takuji Hosoi, Yuya Minoura, Ryohei Asahara, Hiroshi Oka, Takayoshi Shimura ORCID, Heiji Watanabe
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Schottky source/drain (S/D) Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated by combining high permittivity (high-k) gate stacks with ultrathin AlOx interlayers and Fermi level depinning process by means of phosphorous ion implantation into NiGe/Ge contacts. Improved thermal stability of the metal/high-k/Ge stacks enabled self-aligned integration scheme for Schottky S/D complementary MOS applications. Significantly reduced parasitic resistance and aggressively scaled high-k gate stacks with sub-1-nm equivalent oxide thickness were demonstrated for both p-and n-channel Schottky Ge-FETs with the proposed combined technology.