Published in
CLEO:2011 - Laser Applications to Photonic Applications
DOI: 10.1364/cleo_at.2011.jtub5
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UV light emitter on bulk semipolar (11-22) GaN
Journal article published in 2011 by
T. Detchprohm 
,
L. Zhao,
M. Zhu,
C. Stark,
M. Dibiccari,
S. You,
W. Hou,
E. A. Preble,
T. Paskova,
K. Evans,
C. Wetzel
,
L. Zhao,
M. Zhu,
C. Stark,
M. Dibiccari,
S. You,
W. Hou,
E. A. Preble,
T. Paskova,
K. Evans,
C. Wetzel
Abstract
A 392 nm GaInN-based UV light emitter has been demonstrated by homoepitaxial growth technique aiming to improve quantum efficiency by crystalline perfection of the heterostructures on naturally stable semipolar (11-22) bulk GaN.