Published in
American Institute of Physics, Journal of Applied Physics, 20(113), p. 204902
DOI: 10.1063/1.4807001
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Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Journal article published in 2013 by
G. V. Luong,
S. Wirths,
S. Stefanov,
B. Holländer,
J. Schubert 
,
J. C. Conde,
T. Stoica,
U. Breuer,
S. Chiussi,
M. Goryll,
D. Buca,
S. Mantl
,
J. C. Conde,
T. Stoica,
U. Breuer,
S. Chiussi,
M. Goryll,
D. Buca,
S. Mantl
This paper is available in a repository.
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