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IOP Publishing, Nanotechnology, 25(22), p. 254011, 2011

DOI: 10.1088/0957-4484/22/25/254011

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Molecular dynamics simulations of oxide memory resistors (memristors)

Journal article published in 2010 by S. E. Savel'ev ORCID, A. S. Alexandrov, A. M. Bratkovsky, R. Stanley Williams
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead to density fluctuations and short-range ordering, while illustrating some aspects of observed experimental behavior, such as memristor polarity inversion. ; Comment: 15 pages, 5 figures