Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates

American Institute of Physics, Journal of Applied Physics, 1(105), p. 013103

Journal article published in 2009 by Zhen-Yu Li, Ming-Hua Lo, Ching-Hua Chiu, Po-Chun Lin, Tien-Chang Lu

, Hao-Chung Kuo, Shing-Chung Wang

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