Published in
Trans Tech Publications, Materials Science Forum, (679-680), p. 221-224, 2011
DOI: 10.4028/www.scientific.net/msf.679-680.221
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Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
Journal article published in 2011 by
Nicolò Piluso,
Andrea Severino,
Massimo Camarda 
,
Andrea Canino,
Antonino La Magna,
Francesco La Via
,
Andrea Canino,
Antonino La Magna,
Francesco La Via
This paper is made freely available by the publisher.
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Abstract
Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC films grown on (111) and (100) Si oriented substrates. Local stacking variations observed on the (111) 3C-SiC surface lead to a worse crystal morphology compared to (100) 3C-SiC films resulting in a decrease of the average bulk mobility.