Published in

American Institute of Physics, Applied Physics Letters, 1(104), p. 011908

DOI: 10.1063/1.4861471

Links

Tools

Export citation

Search in Google Scholar

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Journal article published in 2014 by Cédric Robert Robert, Katiane Pereira da Silva, Mikhail O. Nestoklon, Katiane Pereira Da Silva, Laurent Pedesseau, Alejandro R. Goñi ORCID, Charles Cornet ORCID, Maria I. Alonso ORCID, Pascal Turban ORCID, Jean-Marc Jancu, Jacky Even ORCID, Olivier Durand
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions. (C) 2014 AIP Publishing LLC.