Published in
Elsevier, Journal of Crystal Growth, (227-228), p. 639-644
DOI: 10.1016/s0022-0248(01)00789-8
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Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1−xAs and InxGa1−xAs buffer layers on GaAs substrates
Journal article published in 2001 by
V. H. Méndez-Garcı́a,
M. López-López,
A. Lastras-Martı́nez,
M. A. Vidal 
,
J. Luyo-Alvarado,
M. Meléndez-Lira,
K. Momose,
H. Yonezu
,
J. Luyo-Alvarado,
M. Meléndez-Lira,
K. Momose,
H. Yonezu
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