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American Chemical Society, Crystal Growth and Design, 12(10), p. 5117-5122, 2010

DOI: 10.1021/cg100851b

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Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)

Journal article published in 2010 by W. H. Chang ORCID, P. Chang, T. Y. Lai, Y. J. Lee, J. Kwo, C.-H. Hsu, M. Hong
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

High-quality Gd 2 O 3 epi-films 5-20 nm thick have been grown on GaN (0001) using molecular beam epitaxy. A detailed structural investigation was carried out by in situ reflection high energy electron diffraction, cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source. The films consist of the high-temperature monoclinic (m) phase with six rotational domains, which can be easily mistaken for being the hexagonal phase. All the domains follow the m-Gd 2 O 3 (201)AE020ae) GaN (0001)<1120> orientational relationship.