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Elsevier, Solid State Communications, 11-12(150), p. 461-465

DOI: 10.1016/j.ssc.2010.01.023

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Thermopower and thermally induced domain wall motion in (Ga, Mn)As

Journal article published in 2009 by Kjetil M. D. Hals, Arne Brataas ORCID, Gerrit E. W. Bauer
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We study two reciprocal thermal effects in the ferromagnetic semiconductor (Ga, Mn)As by scattering theory: domain wall motion induced by a temperature gradient and heat currents pumped by a moving domain wall. The effective out-of-plane thermal spin transfer torque parameter PQβQ, which governs the coupling between heat currents and a magnetic texture, is found to be of the order of unity. Unpinned domain walls are predicted to move at speed 10 m/s in temperature gradients of the order 10 K/μm. The cooling power of a moving domain wall only compensates the heating due to friction losses at ultra-low domain wall velocities of about 0.07 m/s. The Seebeck coefficient is found to be of the order 100–500 μV/K at , in good agreement with recent experiments.