Published in

Elsevier, Thin Solid Films, (543), p. 122-124

DOI: 10.1016/j.tsf.2013.02.043

Links

Tools

Export citation

Search in Google Scholar

p/n junction depth control using amorphous silicon as a low temperature dopant source

Journal article published in 2013 by G. Lavareda ORCID, A. de Calheiros Velozo, C. Nunes de Carvalho, A. Amaral
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Red circle
Postprint: archiving forbidden
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO