Published in

Elsevier, Thin Solid Films, 7(520), p. 2739-2744

DOI: 10.1016/j.tsf.2011.11.079

Links

Tools

Export citation

Search in Google Scholar

Sputtering deposition of amorphous cadmium stannate as transparent conducting oxide

Journal article published in 2012 by C. Baratto ORCID, A. Ponzoni, M. Ferroni, L. Borgese, E. Bontempi, G. Sberveglieri
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Red circle
Postprint: archiving forbidden
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

In this work we studied deposition conditions by RF sputtering of ternary oxides of Cd and Sn, starting from Cd2SnO4 target and varying substrate temperature, sputtering power and deposition gas (from inert Ar to oxidizing 50% Ar-50% O-2 atmosphere). The aim of this study was to obtain thin films for use as Transparent Conducting Oxide (TCO). TCOs are oxides that couples low sheet resistance and high transparency that find application in many fields like solar cells, light emitting diodes and transparent thin film transistors. Thin films functional properties were characterised by means of sheet resistance and transmittance measurements in the visible region, and film composition and structure were investigated by total reflection X ray fluorescence and glancing incidence X ray diffraction. Morphology was studied by Atomic Force Microscopy and Scanning Electron Microscope and showed very smooth surface suitable for solar cells application. Composition and phase analysis allowed us to discuss possible correlation of film structure with functional properties. Deposition in inert atmosphere at 400 degrees C substrate temperature was selected for its low sheet resistance and high transparency that are comparable to the ones of commercial TCOs like indium tin oxide or SnO2: F. The thin film obtained in these conditions was amorphous, and it crystallized into CdSnO3 ilmenite phase when annealed at 700 degrees C; segregation of Sn3O4 was also observed. Since sheet resistance of thin films increases after annealing treatments, amorphous thin film was selected for future applications. (C) 2011 Elsevier B.V. All rights reserved.