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Conference on Lasers and Electro-Optics 2012

DOI: 10.1364/cleo_at.2012.jth4j.3

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Cubic GaInN/GaN Multi-Quantum Wells for Increased Smart Lighting System Efficiency

This paper is available in a repository.
This paper is available in a repository.

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Abstract

Cubic GaInN/GaN multi-quantum wells (MQWs) are grown on V-grooved Si {100} substrates. The crystal phase is confirmed by electron-back scatter diffraction and cathodoluminescence shows room temperature MQW peak emission at 498 nm.