Published in
Conference on Lasers and Electro-Optics 2012
DOI: 10.1364/cleo_at.2012.jth4j.3
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Cubic GaInN/GaN Multi-Quantum Wells for Increased Smart Lighting System Efficiency
Journal article published in 2012 by
Christoph J. M. Stark,
Theeradetch Detchprohm 
,
Christian Wetzel ,
Seung-Chang Lee,
Steven R. J. Brueck ,
Ieee
,
Christian Wetzel ,
Seung-Chang Lee,
Steven R. J. Brueck ,
Ieee
Abstract
Cubic GaInN/GaN multi-quantum wells (MQWs) are grown on V-grooved Si {100} substrates. The crystal phase is confirmed by electron-back scatter diffraction and cathodoluminescence shows room temperature MQW peak emission at 498 nm.