Conference on Lasers and Electro-Optics 2012
DOI: 10.1364/cleo_at.2012.jth4j.3
Cubic GaInN/GaN multi-quantum wells (MQWs) are grown on V-grooved Si {100} substrates. The crystal phase is confirmed by electron-back scatter diffraction and cathodoluminescence shows room temperature MQW peak emission at 498 nm.