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Elsevier, Solid-State Electronics, (113), p. 132-137

DOI: 10.1016/j.sse.2015.05.027

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Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS

Journal article published in 2015 by Francesco Maria Puglisi, Paolo Pavan ORCID, Luca Larcher, Andrea Padovani
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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