Published in

2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA)

DOI: 10.1109/animma.2013.6727935

Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 4(61), p. 2040-2044, 2014

DOI: 10.1109/tns.2014.2320816

Links

Tools

Export citation

Search in Google Scholar

Study of GaN Radiation Sensor After In-core Neutron Irradiation

Journal article published in 2013 by Padhraic Mulligan ORCID, Jie Qiu, Jie Qiu, Jinghui Wang, Lei R. Cao
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors' performance showed insignificant changes after in-core neutron irradiation at 1015 n/cm2.