Published in

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop

DOI: 10.1109/.2006.1629491

Links

Tools

Export citation

Search in Google Scholar

Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory

Proceedings article published in 2006 by Chang-Hyun Lee, Chang-Hyun Lee, Changseok Kang, Yoocheol Shin, Jaesung Sim, Changseok Kang, Jang-Sik Lee, Jaesung Sim, Younseok Jeong, Juhyung kim, Jang-Sik Lee ORCID, Viena Kim, Juhyung Kim, Ki-Tae Park, Wonseok Jung and other authors.
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

To realize TANOS-NAND flash memory, key requirements like program/erase speed, read retention, and program disturb window should be satisfied. In this work, we present 63 nm NAND-type TANOS cells to satisfy all the requirements and to replace floating-gate cells in conventional NAND flash memory without changing a circuit design and a sensing window