Epitaxial graphene is grown on semi-insulating (SI) 4H-SiC in a hot wall CVD reactor by graphitization and in-situ intercalation with (H)ydrogen. A holistic material characterization is performed in order to ascertain the number of layers, layer uniformity, and electron transport properties of the epi-layers via electronic test structures and Raman spectroscopy. Bilayer graphene field effect transistors (GFETs) are fabricated using a full electron beam lithography (EBL) process which is optimized for low contact resistances of . Mobilities of order are achieved on bilayer samples after fabrication. The devices demonstrate high transconductance and high current density . The output conductance at the bias of maximum transconductance is . The GFETs demonstrate an extrinsic and of 20 and , respectively and show power gain at in a system, which is the highest reported to date.