Published in

Elsevier, Organic Electronics, 1(13), p. 136-141

DOI: 10.1016/j.orgel.2011.10.003

Links

Tools

Export citation

Search in Google Scholar

Charge transport and density of trap states in balanced high mobility ambipolar organic thin-film transistors

Journal article published in 2012 by Tae-Jun Ha, Prashant Sonar ORCID, Brian Cobb, Ananth Dodabalapur
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Red circle
Postprint: archiving forbidden
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

We report on charge transport and density of trap states (trap DOS) in ambipolar diketopyrrolopyrrole–benzothiadiazole copolymer thin-film transistors. This semiconductor possesses high electron and hole field-effect mobilities of up to 0.6cm2/V-s. Temperature and gate-bias dependent field-effect mobility measurements are employed to extract the activation energies and trap DOS to understand its unique high mobility balanced ambipolar charge transport properties. The symmetry between the electron and hole transport characteristics, parameters and activation energies is remarkable. We believe that our work is the first charge transport study of an ambipolar organic/polymer based field-effect transistor with room temperature mobility higher than 0.1cm2/V-s in both electrons and holes.