We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $∼ 9~$to $∼ 30$~nm in the temperature range 0.1 to 200~K and up to 0.2~T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields $R_{\rm H}$ is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure. ; Comment: 10 pages with 7 figures, to be published in AIP Advances (2014)