Published in

Elsevier, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2(579), p. 766-768

DOI: 10.1016/j.nima.2007.05.295

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Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

This paper is available in a repository.
This paper is available in a repository.

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Data provided by SHERPA/RoMEO

Abstract

The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26MeV protons. After a 1MeV neutron equivalent fluence of 1x10E15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.