American Institute of Physics, Applied Physics Letters, 11(103), p. 112103
DOI: 10.1063/1.4821191
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Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurements confirm a p-n junction commensurate with a doping density of ∼1018 cm−3. Photoluminescence and cathodoluminescence confirm emission from Mg-acceptors in porous p-type GaN.