High-Performance and Low-Power Rewritable SiOx1 kbit One Diode-One Resistor Crossbar Memory Array
Journal article published in 2013 by
Gunuk Wang,
Adam C. Lauchner,
Jian Lin,
Douglas Natelson 
,
Krishna V. Palem,
James M. Tour
,
Krishna V. Palem,
James M. Tour
This paper is available in a repository.
Full text: Download
Published version:
archiving forbidden
Data provided by 
Abstract
An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.