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Optoelectronic Materials and Devices for Optical Communications

DOI: 10.1117/12.635425

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Long wavelength InP-based micromachined photodetector

Journal article published in 2005 by Wen-Juan Wang, Cheng Huang, Hui Huang, Yong-Qing Huang, Bin Chen, Xiao-Min Ren
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A novel InP-based micromechanied tunable photodetector with the structure of OMITMC (One-Mirror-Inclined Three-Mirror-Cavity)is presented. The tuning characteristic of the device is analysed in the way of electrical actuation. Through simulation of the filter transmission spectra and the quantum efficiency, the characteristics of high tunability, narrow bandwidth and high quantum efficiency are analysed. As a result, the photodetector is tuned with 30nm,with a quantum efficiency of 59% and a linewidth of 1.2nm, when actuated by 10 volts.