Published in
Elsevier, Microelectronics Reliability, 9-10(52), p. 1909-1912
DOI: 10.1016/j.microrel.2012.06.012
Links
Tools
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Postprint:
archiving forbidden
Published version:
archiving forbidden
Data provided by 