Published in
Elsevier, Microelectronic Engineering, (109), p. 322-325, 2013
DOI: 10.1016/j.mee.2013.03.030
Links
Tools
Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 