We describe the fabrication of ZnTe1-xOx intermediate band solar cell (IBSC) using the combination of oxygen ion implantation and pulsed laser melting. Also, we report the first demonstration of homojunction ZnTe solar cells in which n-ZnTe layer is fabricated by thermal diffusion of Al into p-ZnTe. The preliminary results of the ZnTe1-xOx IBSC are compared with the ZnTe cell. The homojunction ZnTe solar cells exhibited photovoltaic activity with an open circuit voltage of approximately 0.9 V and a maximum short circuit current (JSC) of 1.75 mA/cm2. JSC was found to depend strongly on the location of pn-junction, with shallower pn-junction depth, corresponding to higher JSC. Photo-modulated reflectance spectra of ZnTe1-xOx, show two optical transitions from the valence band to the conduction subband E+ (~2.5 eV) and from the valence band to the intermediate band E- (~1.7 eV). The external quantum efficiency of ZnTe1-xOx solar cell clearly shows PV responses due to the transition from valence band to the two conduction subbands (E- and E+) demonstrating the photovoltaic action through the intermediate band in this highly mismatched alloy.