Elsevier, Thin Solid Films, (565), p. 165-171
DOI: 10.1016/j.tsf.2014.06.039
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Nanolaminate (nanomultilayer) thin films of TiO2 and Ho2O3 were grown on Si(001) substrates by atomic layer deposition at 300 °C from alkoxide and β-diketonate based metal precursors and ozone. Individual layer thicknesses were 2 nm for TiO2 and 4.5 nm for Ho2O3. As-deposited films were smooth and X-ray amorphous. After annealing at 800 °C and higher temperatures the nanolaminate structure was destroyed by solid-state reaction to form Ho2Ti2O7. The films demonstrated diamagnetic or paramagnetic behaviour in the as-deposited state. After annealing, the films possessed net magnetic moment, allowing one to record saturation magnetization and weak coercivity.