Elsevier, Journal of Non-Crystalline Solids, 9-20(352), p. 1761-1764
DOI: 10.1016/j.jnoncrysol.2005.10.069
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The electrical stability of metal–insulator–semiconductor (MIS) capacitors and field-effect transistor structures based in organic semi-conductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K and is caused by an electronic trapping process. Experimental results show that water is responsible for the trapping mechanism.