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Wiley, Advanced Materials, 3(24), p. 407-411, 2011

DOI: 10.1002/adma.201103411

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Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

Journal article published in 2011 by Jaesung Park, Sae Byeok Jo, Young-Jun Yu, Youngsoo Kim, Jae Won Yang, Wi Hyoung Lee, Hyun Ho Kim, Byung Hee Hong, Philip Kim, Kilwon Cho, Kwang S. Kim
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Abstract

Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH(2) -functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.