SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVD-grown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. Film growth was performed using a two-step growth process with propane and silane as the C and Si precursors in hydrogen carrier gas. The film thickness was held constant at ~2.5 µm independent of the growth rate so as to allow for direct films comparison as a function of the growth rate. Supported by profilometry, Raman and micro-machined free-standing structures, this study shows that the growth rate is a fundamental parameter for low-defect and low-stress hetero-epitaxial growth process of 3C-SiC on Si substrates. Stress analysis performed by modify Stoney’s equation trough optical curvature measurement, Raman shift analysis and micro-machining of free-standing structures that shows apparent disagreement about the nature of the stress. These odds between the experimental data can be explained assuming a strong stress field located in the substrate and related to defects generated in the silicon during the growth process.