Published in
IOP Publishing, Journal of Physics: Condensed Matter, 32(25), p. 325304
DOI: 10.1088/0953-8984/25/32/325304
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The effect of (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
Journal article published in 2013 by
D. J. Carrad 
,
A. M. Burke,
P. J. Reece,
R. W. Lyttleton,
D. E. J. Waddington ,
A. Rai,
D. Reuter,
A. D. Wieck,
A. P. Micolich
,
A. M. Burke,
P. J. Reece,
R. W. Lyttleton,
D. E. J. Waddington ,
A. Rai,
D. Reuter,
A. D. Wieck,
A. P. Micolich
This paper is available in a repository.
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