Vertical arrays of nanostructures have been widely used as major components in some of the most ground-breaking modern research-based devices, and ZnO nanowires have received particular attention because of their favorable electronic properties. Using a local multiprobe technique to measure the properties of individual ZnO nanowires in vertical arrays, we show for the first time that for metal-catalyzed ZnO nanowire growth the electrical contribution of individual wires to a device is highly dependent on the fate of the catalyst nanoparticle during growth. To overcome the limitations of metal-catalyzed growth, nanowires grown from a defect-driven nucleation process are shown to provide high-quality device structures with excellent long-path electrical conduction. Vertical arrays of nanostructures have been widely used as major components in some of the most ground-breaking modern research-based devices, and ZnO nanowires have received particular attention because of their favorable electronic properties. Using a local multiprobe technique to measure the properties of individual ZnO nanowires in vertical arrays, we show for the first time that for metal-catalyzed ZnO nanowire growth the electrical contribution of individual wires to a device is highly dependent on the fate of the catalyst nanoparticle during growth. To overcome the limitations of metal-catalyzed growth, nanowires grown from a defect-driven nucleation process are shown to provide high-quality device structures with excellent long-path electrical conduction.