We probe whether an enhancement in the Seebeck coefficient (S) could be obtained in GaNxAs1-x through interactions between the N resonant states and the GaAs conduction band. Through experimental investigations, we then determined that an insufficient increase in the density of states effective mass (m(d)) precludes such an enhancement. The relative influences of Group IV/VI dopants and the carrier concentration along with N passivation are discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626041]