Published in

IOP Publishing, Japanese Journal of Applied Physics, 4S(52), p. 04CH09, 2013

DOI: 10.7567/jjap.52.04ch09

Links

Tools

Export citation

Search in Google Scholar

Growth of (111) One-Axis-Oriented Bi(Mg1/2Ti1/2)O3Films on (100)Si Substrates

Journal article published in 2013 by Takahiro Oikawa, Shintaro Yasui ORCID, Takayuki Watanabe, Koji Ishii, Yoshitaka Ehara, Hisato Yabuta, Takeshi Kobayashi, Tetsuro Fukui, Kaoru Miura, Hiroshi Funakubo
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Orange circle
Postprint: archiving restricted
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

Films of a high-pressure perovskite phase, Bi(Mg1/2Ti1/2)O3, were prepared on (111)c-oriented SuRuO3-coated (111)Pt/TiO2/SiO2/(100)Si substrates. The perovskite Bi(Mg1/2Ti1/2)O3 films had a (111) one-axis orientation, because their constituent grains were epitaxially grown on (111)c-oriented perovskite SrRuO3 ones. The remanent polarization and piezoelectric constant measured at an applied electric field of 600 kV/cm were about 30 µC/cm2 and 40 pm/V, respectively. A remarkable phase transition was not observed from room temperature to 350 °C in a (111) one-axis-oriented Bi(Mg1/2Ti1/2)O3 film, suggesting that the Curie temperature of this film is above 350 °C.