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Wiley, Chemistry - An Asian Journal, 1(9), p. 253-260, 2013

DOI: 10.1002/asia.201300895

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Solution-Processable n-Type Semiconductors Based on Unsymmetrical Naphthalene Imides: Synthesis, Characterization, and Applications in Field-Effect Transistors

Journal article published in 2013 by Jinjun Shao, Jingjing Chang ORCID, Chunyan Chi
This paper is available in a repository.
This paper is available in a repository.

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Abstract

A series of unsymmetrical naphthalene imide derivatives (1-5) with high electron affinity was synthesized and used in n-channel organic field-effect transistors (OFETs). They have very good solubility in common organic solvents and good thermal stability up to 320 °C. Their photophysical, electrochemical, and thermal properties were investigated in detail. They showed low-lying LUMO energy levels from -3.90 to -4.15 eV owing to a strong electron-withdrawing character. Solution-processed thin-film OFETs based on 1-4 were measured in both N2 and air. They all showed n-type FET behavior. The liquid-crystalline compounds 1 a, 1 b, and 3 showed good performance owing to the self-healing properties of the film in the liquid-crystal phase. Compound 3 has an electron mobility of up to 0.016 cm(2) V(-1) s(-1) and current on/off ratios of 10(4) -10(5) .