A charge profiling of GaInN/GaN hetero-polarization structures typical for high power 525 nm green light emitting diodes is presented. We identify three individual charge maxima of some 1.17 × 1012 cm–2 electrons with a line width as narrow as 17 nm corresponding to three individual but widely separated quantum wells. The sheet charge density indicates negligible screening of the polarization charges. The voltage required to deplete each well is found to be ΔU = –0.4 ± 0.1 V and approximates the voltage drop across the polarization dipole of the quantum well. The modulation frequency dependence reveals a characteristic time constant of 1 μs for the dominant trapping and ionization process. Such analysis of high performance green light emitters proves a suitable tool for further device optimization. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)