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American Physical Society, Physical review B, 7(80), 2009

DOI: 10.1103/physrevb.80.073304

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Bias-dependent scanning tunneling microscopy investigation of potassium adsorption on aSi(111)−7×7surface

Journal article published in 2009 by Hao Zheng ORCID, Richard E. Palmer
This paper is available in a repository.
This paper is available in a repository.

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Data provided by SHERPA/RoMEO

Abstract

We have conducted a scanning tunnelling microscopy (STM) investigation of the bare Si(111)-7×7 surface reconstruction and of submonolayer potassium (K) adsorption at room temperature, employing a specially prepared metal tip. On the bare Si surface, different dangling-bond states were distinguished by STM images at different bias voltages. On the K adsorption, two kinds of adsorption geometry, single-atom bright spots on top of the adatoms and dimerlike protrusions at rest atom sites, were mapped in bias-dependent STM images with atomic resolution. A new surface state and a surface-energy gap induced by the alkali adsorbate were identified.