The continued downscaling in SiGe heterostructures is approaching the point at which lateral confinement leads to a uniaxial strain state, giving high enhancements of the charge carrier mobility. Investigation of the strain relaxation as induced by the patterning of a continuous SiGe layer is thus of scientific and technological importance. In the present work, the strain in single lithographically defined low-dimensional SiGe structures has been directly mapped via nanobeam x-ray diffraction. We found that the nanopatterning is able to induce an anisotropic strain relaxation, leading to a conversion of the strain state from biaxial to uniaxial. Its origin is fully compatible with a pure elastic deformation of the crystal lattice without involving plastic relaxation by injection of misfit dislocations.