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American Institute of Physics, Applied Physics Letters, 8(89), p. 082507

DOI: 10.1063/1.2338564

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Multilayer buffer for high-temperature superconductor devices on MgO

Journal article published in 2006 by M. I. Faley ORCID, S. B. Mi, A. Petraru, C. L. Jia, U. Poppe, K. Urban
This paper is available in a repository.
This paper is available in a repository.

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Abstract

A multilayer thin film epitaxial passivation of single crystal MgO substrates was developed. YBa2Cu3O7−x films on the buffered MgO substrates demonstrate pure c-axis orientation, absence of in-plane disoriented grains, transition temperature Tc>91 K, and critical current density Jc ∼ 5 MA/cm2 at 77.4 K and were deposited in thicknesses of up to several micrometers without cracks. High-temperature superconductor multilayer flux transformers of 2 μm thickness on the buffered MgO substrates demonstrated improved insulation between the superconducting layers and an increased dynamic range compared to flux transformers on SrTiO3 substrates.