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phys. stat. sol. (c), 1(0), p. 258-262

DOI: 10.1002/pssc.200390037

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High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE

Journal article published in 2002 by F. Fedler, H. Klausing, R. J. Hauenstein, A. Ponce ORCID, S. I. Molina ORCID, O. Semchinova, J. Aderhold, J. Graul
This paper is available in a repository.
This paper is available in a repository.

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Abstract

High reflectivity (>90%) distributed Bragg reflectors (DBR) have been successfully produced utilizing the AlGaN/AlN material system. We present reflectivity and XRD data of Ga-polar AlxGa1—xN/AlN Bragg reflectors grown on sapphire. High peak reflectivities between 54% (5.5 period mirror) and 97% (25.5 period mirror) combined with large reflectivity FWHM of 30 nm have been found. All reflectors have been designed by ex-situ spectroscopic ellipsometry (SE) data of respective reference samples.