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American Institute of Physics, Applied Physics Letters, 1(91), p. 012111

DOI: 10.1063/1.2753716

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Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

Journal article published in 2007 by J. M. Ripalda, D. Alonso Alvarez ORCID, B. Alen, B. Alén, A. G. Taboada, J. M. Garcia ORCID, Y. Gonzalez, L. Gonzalez
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 mu m spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3 mu m emission wavelength. (c) 2007 American Institute of Physics.