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Published in

IOP Publishing, Nanotechnology, 11(20), p. 115701, 2009

DOI: 10.1088/0957-4484/20/11/115701

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Quantifying the size-dependent effect of the residual surface stress on the resonant frequencies of silicon nanowires if finite deformation kinematics are considered

Journal article published in 2009 by Harold S. Park ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

There are two major objectives to the present work. The first objective is to demonstrate that, in contrast to predictions from linear surface elastic theory, when nonlinear, finite deformation kinematics are considered, the residual surface stress does impact the resonant frequencies of silicon nanowires. The second objective of this work is to delineate, as a function of nanowire size, the relative contributions of both the residual (strain-independent) and the surface elastic (strain-dependent) parts of the surface stress to the nanowire resonant frequencies. Both goals are accomplished by using the recently developed surface Cauchy-Born model, which accounts for nanoscale surface stresses through a nonlinear, finite deformation continuum mechanics model that leads to the solution of a standard finite element eigenvalue problem for the nanowire resonant frequencies. In addition to demonstrating that the residual surface stress does impact the resonant frequencies of silicon nanowires, we further show that there is a strong size dependence to its effect; in particular, we find that consideration of the residual surface stress alone leads to significant errors in predictions of the nanowire resonant frequency, with an increase in error with decreasing nanowire size. Correspondingly, the strain-dependent part of the surface stress is found to have an increasingly important effect on the resonant frequencies of the nanowires with decreasing nanowire size.