Published in
American Institute of Physics, Applied Physics Letters, 22(86), p. 222110
DOI: 10.1063/1.1943487
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Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate
,
M. Izadifard,
I. A. Buyanova,
Buyanova Ia,
W. M. Chen,
Y. G. Hong,
H. P. Xin,
C. W. Tu
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Abstract
Dilute-nitride Ga0.44In0.56NyP1−y alloys with y = 0–0.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination. Resolved hyperfine structure for one of the detected ODMR signals suggests involvement of a Ga-interstitial or an As-antisite in the structure of the related defect.