Published in
Elsevier, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1-4(48), p. 211-215
DOI: 10.1016/0168-583x(90)90106-5
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Lattice location of ion-implanted radioactive dopants in compound semiconductors
Journal article published in 1990 by
S. Winter,
S. Blässer,
H. Hofsäss,
S. Jahn,
G. Lindner,
U. Wahl 
,
E. Recknagel
,
E. Recknagel
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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